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Slkor DTC114EE

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Slkor DTC114EE

DC Current Gain : 30@5mA,5V

Operating Temperature : -

Current - Collector(Ic) : 100mA

Output Voltage(VO(on)) : -

Input Resistor : 10kΩ

Number : 1 NPN (Pre-Biased)

Resistor Ratio : 1

Pd - Power Dissipation : 150mW

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-523

Mfr. Part # : DTC114EE

Model Number : DTC114EE

Package : SOT-523

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Product Overview

This NPN silicon epitaxial planar digital transistor features built-in bias resistors, simplifying circuit design and reducing the quantity of parts and manufacturing processes. It is suitable for various digital applications.

Product Attributes

Brand: SLKORMICRO (implied by website)
Origin: Not specified
Material: Silicon Epitaxial Planar
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector Emitter Voltage	VCEO	-	-	50	V	-
Input Voltage	VI	-10	-	40	V	-
Collector Current	IC	-	-	100	mA	-
Power Dissipation	Ptot	-	-	150	mW	Ta = 25
Junction Temperature	Tj	-	-	150		-
Storage Temperature Range	Tstg	-55	-	150		-
DC Current Gain	hFE	30	-	-	-	VCE = 5 V, IC = 5 mA
Collector Base Cutoff Current	ICBO	-	-	500	nA	VCB = 50 V
Emitter Base Cutoff Current	IEBO	-	-	0.88	mA	VEB = 5 V
Collector Emitter Saturation Voltage	VCE(sat)	-	-	0.3	V	IC = 10 mA, IB = 0.5 mA
Input on Voltage	VI(on)	-	-	3	V	VCE = 0.3 V, IC = 10 mA
Input off Voltage	VI(off)	0.5	-	-	V	VCE = 5 V, IC = 100 A
Transition frequency	fT	-	250	-	MHz	VCE = 10 V, -IE = 5 mA, f = 100 MHz
Input Resistance	R1	7	10	13	K	-
Resistance Ratio	R2 / R1	0.8	1	1.2	-	-

MARKING: DTC114EE

2201210930_Slkor-DTC114EE_C2965554.pdf

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