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Slkor PDTC114ET

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Slkor PDTC114ET

Current - Collector(Ic) : 100mA

type : NPN

Output Voltage(VO(on)) : 300mV

Input Resistor : 13kΩ

Resistor Ratio : 1

Number : 1 NPN (Pre-Biased)

Pd - Power Dissipation : 200mW

Description : Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 100mA 200mW Surface Mount SOT-23

Mfr. Part # : PDTC114ET

Model Number : PDTC114ET

Package : SOT-23

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Product Overview

This product features built-in bias resistors, simplifying inverter circuit configuration without external components. The thin-film isolation resistors allow for negative input biasing and minimize parasitic effects, making device design easy by only requiring on/off condition settings for operation.

Product Attributes

Brand: slkormicro
Model: PDTC114ET
Package: SOT-23 Plastic Package

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Input voltage (off)	VI(off)		0.5		V	VCC=5V ,IO=100A
Input voltage (on)	VI(on)		3		V	VO=0.3V ,IO=10 mA
Output voltage (on)	VO(on)	0.1	0.3		V	IO/II=10mA/0.5mA
Input current	II		0.88		mA	VI=5V
Output current (off)	IO(off)		0.5		A	VCC=50V ,VI=0
DC current gain	GI	30				VO=5V ,IO=5mA
Input resistance	R1	7	10	13	K
Resistance ratio	R2/R1	0.8	1	1.2
Transition frequency	fT		250		MHz	VCE=10V ,IE=-5mA,f=100MHz
Supply voltage	VCC			50	V
Input voltage	VIN	-10		40	V
Output current	IO			50	mA	IC(MAX)
Power dissipation	Pd			200	mW
Junction temperature	Tj			150
Storage temperature	Tstg	-55		150

2212130930_Slkor-PDTC114ET_C5330396.pdf

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