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Slkor DTC114YE

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Slkor DTC114YE

Current - Collector Cutoff : 500nA

DC Current Gain : 68@5mA,5V

Current - Collector(Ic) : 100mA

type : NPN

Transition frequency(fT) : 250MHz

Input Resistor : 10kΩ

Vce Saturation(VCE(sat)) : 300mV@250uA,5mA

Resistor Ratio : 4.7

Pd - Power Dissipation : 150mW

Collector - Emitter Voltage VCEO : 50V

Description : 68@5mA,5V 100mA 150mW 50V SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : DTC114YE

Model Number : DTC114YE

Package : SOT-523

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Product Overview

NPN Silicon Epitaxial Planar Digital Transistor with built-in bias resistors. This design simplifies circuit design and reduces the quantity of parts and manufacturing process.

BrandSLK

Product NameDTC114YE

TypeNPN Silicon Epitaxial Planar Digital Transistor

Package TypeSOT-523

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit
DC Current Gain	h_FE	68	-	-	-
Collector Base Cutoff Current	I_CBO	-	-	0.5	µA
Emitter Base Cutoff Current	I_EBO	-	-	0.88	mA
Collector Emitter Saturation Voltage	V_CE(sat)	-	-	0.3	V
Input on Voltage	V_(on)	-	-	1.4	V
Input off Voltage	V_(off)	0.3	-	-	V
Transition frequency	f_T	-	250	-	MHz
Input Resistance	R₁	7	10	13	KΩ
Resistance Ratio	R₂ / R₁	3.7	4.7	5.7	-

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Collector Emitter Voltage	V_CEO	50	V
Input Voltage	V_I	-6 to +40	V
Collector Current	I_C	100	mA
Power Dissipation	P_tot	150	mW
Junction Temperature	T_j	150	°C
Storage Temperature Range	T_stg	-55 to +150	°C

Package Outline Dimensions (SOT-523)

Symbol	Dimension	Min	Max
A	Overall height	0.60	0.80
A1	Height above seating plane	0.010	0.100
B	Overall width	0.95	1.05
bp	Width of lead, 2x	0.26	0.40
bq	Width of lead, 2x	0.16	0.30
C	Flat on top of package, 2x	0.09	0.15
D	Overall length	1.50	1.70
E	Overall width	0.70	0.85
HE	Overall height	1.45	1.75
Lp	Lead length, 2x	0.16	0.36
θ	Angle	0º	5º

2412171034_Slkor-DTC114YE_C42415191.pdf

Slkor DTC114YE Images

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