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Slkor DTA114TE

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Slkor DTA114TE

Current - Collector Cutoff : 500nA

DC Current Gain : 100@1mA,5V

Emitter-Base Voltage VEBO : 5V

Current - Collector(Ic) : 100mA

Operating Temperature : -55℃~+150℃

type : PNP

Transition frequency(fT) : 250MHz

Input Resistor : 10kΩ

Vce Saturation(VCE(sat)) : 300mV@1mA,10mA

Pd - Power Dissipation : 150mW

Collector - Emitter Voltage VCEO : 50V

Description : 100@1mA,5V 100mA 150mW 50V SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : DTA114TE

Model Number : DTA114TE

Package : SOT-523

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Product Overview

The DTA114T Series are digital transistors with built-in bias resistors. These transistors are designed to simplify circuit configurations by eliminating the need for external input resistors, particularly for inverter circuits. The integrated thin-film resistors provide complete isolation and positive input biasing, minimizing parasitic effects. This makes device design easier by focusing solely on the on/off conditions for operation.

Features

Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.

Part NumberDTA114TE

Part NumberDTA114TUA

Part NumberDTA114TKA

Part NumberDTA114TCA

Marking94

PackageSOT-523

PackageSOT-323

PackageSOT-23-3L

PackageSOT-23

Packing MethodReel

Pack Quantity3000pcs/Reel

Part Number	Package	Pin 1	Pin 2	Pin 3	Collector-Base Voltage (V)	Collector-Emitter Voltage (V)	Emitter-Base Voltage (V)	Collector Current (mA)	Power Dissipation (mW)
DTA114TE	SOT-523	IN	GND	OUT	-50	-50	-5	-100	150
DTA114TUA	SOT-323	IN	GND	OUT	-50	-50	-5	-100	200
DTA114TKA	SOT-23-3L	IN	GND	OUT	-50	-50	-5	-100	200
DTA114TCA	SOT-23	IN	GND	OUT	-50	-50	-5	-100	200

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	Ic=-50A,IE=0			-50	V
Collector-emitter breakdown voltage	V(BR)CEO	Ic=-1mA,IB=0			-50	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-50A,IC=0			-5	V
Collector cut-off current	ICBO	VCB=-50V,IE=0		-0.5		A
Emitter cut-off current	IEBO	VEB=-4V,IC=0		-0.5		A
DC current gain	hFE	VCE=-5V,IC=-1mA	100	250	600
Collector-emitter saturation voltage	VCE(sat)	IC=-10mA,IB=-1mA		-0.1	-0.3	V
Transition frequency	fT	VCE=-10V,IE=5mA, f=100MHz		250		MHz
Input resistor	R1		7	10	13	k

2412170958_Slkor-DTA114TE_C42415199.pdf

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