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Slkor MMUN2211

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Slkor MMUN2211

DC Current Gain : 60@5mA,10V

Current - Collector(Ic) : 100mA

Operating Temperature : -65℃~+150℃

Input Resistor : 10kΩ

Resistor Ratio : 1

Pd - Power Dissipation : 200mW

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23

Mfr. Part # : MMUN2211

Model Number : MMUN2211

Package : SOT-23

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Product Overview

This series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network (BRT) is designed to replace a single device and its external resistor bias network. Each BRT integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration eliminates the need for individual components, reducing system cost and board space. The devices are housed in the SOT-23 package, suitable for low power surface mount applications. The SOT-23 package features modified gull-winged leads that absorb thermal stress during soldering, preventing damage to the die. These devices are available on 8 mm embossed tape and reel.

Advantages

Simplifies Circuit Design
Reduces Board Space and Component Count

Application Scenarios

Low power surface mount applications.

Brand

Not explicitly stated, but implied by URL.

Package Type

SOT-23

Transistor Type

NPN Silicon

Network Configuration

Monolithic Bias Resistor Network (BRT)

Resistor Network Components

Series base resistor, Base-emitter resistor

Mounting Type

Surface Mount

Reel Packaging

8 mm embossed tape and reel

Device Marking	R1 (K)	R2 (K)	Collector-Emitter Breakdown Voltage (V(BR)CEO)	DC Current Gain (hFE)	Collector-Emitter Saturation Voltage (VCE(sat))	Input Resistor (R1)	Resistor Ratio (R1/R2)
MMUN2211 (A8A)	10	10	50 Vdc	35-100	- 0.25 Vdc	7.0 k	1.0
MMUN2212 (A8B)	22	22	50 Vdc	60-160	- 0.25 Vdc	15.4 k	1.0
MMUN2213 (A8C)	47	47	50 Vdc	80-200	- 0.25 Vdc	32.9 k	1.0
MMUN2214 (A8D)	10	47	50 Vdc	80-200	- 0.25 Vdc	7.0 k	0.21
MMUN2215 (A8E)	10		50 Vdc	160-350	- 0.25 Vdc	7.0 k	0.1
MMUN2216 (A8F)	4.7		50 Vdc	160-350	- 0.25 Vdc	3.3 k	0.1
MMUN2230 (A8G)	1.0	1.0	50 Vdc	3.0-5.0	- 0.25 Vdc	0.7 k	1.0
MMUN2231 (A8H)	2.2	2.2	50 Vdc	8.0-15	- 0.25 Vdc	1.5 k	1.0
MMUN2232 (A8J)	4.7	4.7	50 Vdc	15-30	- 0.25 Vdc	3.3 k	1.0
MMUN2233 (A8K)	4.7	47	50 Vdc	80-200	- 0.25 Vdc	3.3 k	0.1
MMUN2234 (A8L)	22	47	50 Vdc	80-200	- 0.25 Vdc	15.4 k	0.47
MMUN2235 (A8M)	2.2	47	50 Vdc	80-200	- 0.25 Vdc	2.2 k	0.047
MMUN2238 (A8R)	2.2		50 Vdc	160-350	- 0.25 Vdc	2.2 k	0.185
MMUN2241 (A8U)	100		50 Vdc	160-350	- 0.25 Vdc	70 k	0.056

Characteristic	Symbol	Min	Typ	Max	Unit	Condition
Collector-Base Cutoff Current	ICBO	-	-	100	nAdc	VCB = 50 V, IE = 0
Collector-Emitter Cutoff Current	ICEO	-	-	500	nAdc	VCE = 50 V, IB = 0
Emitter-Base Cutoff Current	IEBO	-	-	0.5	mAdc	VEB = 6.0 V, IC = 0
Collector-Base Breakdown Voltage	V(BR)CBO	50	-	-	Vdc	IC = 10 A, IE = 0
Collector-Emitter Voltage	VCEO	50	-	-	Vdc	Note 2.
Collector Current	IC	-	-	100	mAdc
Total Power Dissipation @ TA = 25C	PD	-	200	-	mW	Note 1.
Derate above 25C		-	1.6	-	mW/C
Operating and Storage Temperature Range	TJ, Tstg	-65	-	150	C
Maximum Temperature for Soldering Purposes	TL	-	260	-	C Sec	Time in Solder Bath
Thermal Resistance Junction-to-Ambient (surface mounted)	RJA	-	625	-	C/W
Output Voltage (on)	VOL	-	-	0.2	Vdc	VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k (and other conditions)
Output Voltage (off)	VOH	4.9	-	-	Vdc	VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k (and other conditions)

2410151050_Slkor-MMUN2211_C41428767.pdf

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