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Slkor DTA143TE

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Slkor DTA143TE

Current - Collector Cutoff : 500nA

DC Current Gain : 100@1mA,5V

Emitter-Base Voltage VEBO : 5V

Current - Collector(Ic) : 100mA

type : PNP

Transition frequency(fT) : 250MHz

Input Resistor : 4.7kΩ

Vce Saturation(VCE(sat)) : 300mV@250uA,5mA

Pd - Power Dissipation : 150mW

Collector - Emitter Voltage VCEO : 50V

Description : 100@1mA,5V 100mA 150mW 50V SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : DTA143TE

Model Number : DTA143TE

Package : SOT-523

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Product Overview

The DTA143T Series are PNP digital transistors with built-in bias resistors. This integrated design eliminates the need for external input resistors, simplifying circuit configuration, particularly for inverter circuits. The thin-film resistors offer complete isolation, allowing for positive input biasing and minimizing parasitic effects. Operation is simplified to setting on/off conditions, making device design easier.

Package Type

SOT-523

Package Type

SOT-323

Package Type

SOT-23-3L

Package Type

SOT-23

Marking

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
V(BR)CBO	Collector-base breakdown voltage	Ic=-50A,IE=0			-50	V
V(BR)CEO	Collector-emitter breakdown voltage	Ic=-1mA,IB=0			-50	V
V(BR)EBO	Emitter-base breakdown voltage	IE=-50A,IC=0			-5	V
ICBO	Collector cut-off current	VCB=-50V,IE=0		-0.5		A
IEBO	Emitter cut-off current	VEB=-4V,IC=0		-0.5		A
VCE(sat)	Collector-emitter saturation voltage	IC=-5mA,IB=-0.25mA		-0.3		V
hFE	DC current gain	VCE=-5V,IC=-1mA	100		600
R1	Input resistor		3.29	4.7	6.11	k
fT	Transition frequency	VCE=-10V,IE=5mA, f=100MHz		250		MHz

Symbol	Parameter	Unit	DTA143TE Limits	DTA143TUA Limits	DTA143TKA Limits	DTA143TCA Limits
PD	Power Dissipation	mW	150	150	200	200

Symbol	Parameter	Unit	Min	Typ	Max
VCBO	Collector-Base Voltage	V			-50
VCEO	Collector-Emitter Voltage	V			-50
VEBO	Emitter-Base Voltage	V			-5
IC	Collector Current	mA			-100
Tj	Junction Temperature				150
Tstg	Storage Temperature		-55		+150

2412170958_Slkor-DTA143TE_C42415200.pdf

Slkor DTA143TE Images

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